Dissolution of Silicon into Germanium Melt under Magnetic Fields
- Paper number
IAC-09.A2.2.11
- Author
Prof. Sadik Dost, University of Victoria, Canada
- Year
2009
- Abstract
A combined numerical and experimental investigation has been undertaken to explore the benefits of an applied static magnetic field on Silicon transport into a Germanium melt. This work utilized a similar material configuration to that used in the Liquid Phase Diffusion (LPD) and Melt-Replenishment Czochralski (Cz) growth systems. The measured concentration profiles from the samples processed with and without the application of magnetic field showed very similar shape. The amount of silicon transport into the melt is slightly higher in the samples processed under magnetic field, and there is a substantial difference in dissolution interface shape indicating a change in flow structure. Without magnetic field, a flat stable interface is observed. In the presence of an applied field, however, the dissolution interface remains flat in the center but dramatically curves back into the source material near the wall. This indicates a far higher dissolution rate at the edge of the silicon source. The 3-D numerical simulation results verify these observations and show that the flow structure of the melt has dramatically changed under the effect of magnetic field. Magnetic field-driven circulation cells develop at the edge of the melt increasing dissolution from this area. The change in the flow field is reflected in the concentration field, and consequently the transport of silicon into the melt is increased along the crucible wall.
- Abstract document
- Manuscript document
(absent)