Three-Dimensional Modeling of SiGe by the Traveling Solvent Method in the Presence of Magnetic Field
- Paper number
IAC-06-A2.4.09
- Author
Mr. Tawfiq Jaber, Ryerson University, Canada
- Coauthor
Prof. Ziad Saghir, Ryerson University, Canada
- Year
2006
- Abstract
Abstract A three-dimensional numerical simulation study was carried out for crystal growth of SiGe by the traveling solvent method (TSM) to grow Ge0.98-Si0.02 in order to get high quality and homogeneity with flat growth interface. By using different techniques such as applying axial magnetic field and rotating magnetic field (RMF), an attempt was made to suppress the buoyancy convection in the Ge0.98-Si0.02 solution zone. The Effects of magnetic field intensity on the transport structures (fluid flow, heat and mass transfer and concentration) in the solvent were investigated in detail. The full steady-state Navier-Stokes equations, as well as the energy, mass transport and continuity equations were solved numerically using the finite element method. It was found, that the intensity of the flow at the centre of the crucible decreases at a faster rate compared to the flow near the walls when increasing the magnetic field intensity. This behaviour creates a stable and uniform silicon distribution in the horizontal plane near the growth interface. It was found that the RMF has a marked effect on the silicon concentration, changing it from convex to nearly flat when the magnetic field intensity increases. Results were then compared with the microgravity case for different heating conditions.
- Abstract document
- Manuscript document
IAC-06-A2.4.09.pdf (🔒 authorized access only).
To get the manuscript, please contact IAF Secretariat.