Solid segregation and translational deterministic g-jitters

Paper number

IAC-06-A2.P.08

Author

Dr. Xavier Ruiz, Universitat Rovira i Virgili, Spain

Year

2006

Abstract

The present work will discuss the effect of translational plane polarized deterministic g-jitters on the dopant segregation of a solid phase obtained using a high temperature confined crystal growth arrangement. To model this system a fully 2D time dependent computational model, two kind of generic thermal environments, two kind of generic samples and four technologically relevant semiconductors will be used. No thermosolutal convection will be introduced – doped materials – and only in the Zinc doped Cadmium Telluride case solid isotropic diffusion will be considered  [1 – 3]. Notice that the growth device act here as a passive nonlinear system against the external disturbances, i.e., vibroconvective effects will not be used to control or damp any kind of transport mechanism. Thus, no mitigation strategies will be considered at all. Particularizing to the case of plane polarized harmonic jitters of single low frequencies - of the order of  miliHertz -, the discussion will be focused on the modifications introduced by relevant factors like the amplitude of the applied gravity signal, the range of frequencies, the solidification velocities and the orientation of the polarization plane against the external thermal gradient. A few considerations about the analogies and deviations between the present computational results and previously reported analytic approaches will also be made. Finally, in the case of plane polarized impulsive jitters several considerations will be made related with elementary short g-pulses as well as with complex g-pulse trains. 

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[\it [1] X. Ruiz, M. Ermakov, J. Crystal Growth 273 ( 2004), 1. [2] X. Ruiz, M. Ermakov, J. Crystal Growth, 275 (2005), e21. [3] X. Ruiz, Annals. New York Academy of. Sciences (In press) 2006.]

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IAC-06-A2.P.08.pdf

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