Equivalent Properties of Single Event Burnout in Power MOSFET Induced by Heavy Ion and 252Cf Fission Fragment
- Paper number
IAC-06-C2.6.08
- Author
Dr. Cao Zhou, Lanzhou Institute of Physics, China
- Year
2006
- Abstract
The power MOSFET that are used in many on-board spacecraft electronic system, such us power supply electronics, are known to be subject to the damage of Single Event Burnout (SEB) induced by charged particles in space radiation environment, especially the heavy ions. The experiment of single event burnout has been carried out using HI-13 accelerator and 252Cf isotope sources. The Single Event Burnout phenomena of power MOSFET has been observed till the Drain-Source Voltage Vds be up to the threshold voltage, when the power MOSFET, such us 2N6798, ATP60M75TVR, has been exposed with heavy ions and 252Cf fission fragment. The experimental results for Single Event Burnout (SEB) in power MOSFET induced by heavy ion and 252Cf fission fragment have been compared and analyzed. It is concluded that the characteristics of single event burnout induced by 252Cf fission fragment is similar as the one of heavy ions produced by HI-13 accelerator. The power MOSFET in condition of turn-on is more susceptible of single event burnout than it in condition of turn-off. The threshold voltage Vds for single event burnout induced by 173MeV bromine ion and 252Cf fission fragment is close to each other. In addition, the current waveform produced in the process of single event burnout induced by heavy ion is also similar as the one of 252Cf fission fragment. And for some kind of power MOSFET device, there have been different cross-section of single event burnout. The equivalent properties of single event burnout in power MOSFET induced by heavy ion and 252Cf fission fragment were characterized by the change of cross section with the drain-source voltage and linear energy transfer of heavy ion, on the basis of SEB analytical model.
- Abstract document
- Manuscript document
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