Innovative Packaging Solution for Power and Thermal Management of Wide-Bandgap Semiconductor Devices in Space Applications

Paper number

IAC-06-C2.8.07

Author

Dr. Chris Merveille, INASMET-TECNALIA, Spain

Coauthor

Mr. Jorge Bárcena, INASMET-TECNALIA, Spain

Coauthor

Mr. Jon Maudes, INASMET-TECNALIA, Spain

Coauthor

Dr. Miquel Vellvehí, Universitat de Barcelona, Spain

Coauthor

Mr. Xavier Jordà, Universitat de Barcelona, Spain

Coauthor

Dr. Isabel Obieta, INASMET-TECNALIA, Spain

Coauthor

Dr. Cristina Jiménez, INASMET-TECNALIA, Spain

Coauthor

Mrs. Cristina Guraya, INASMET-TECNALIA, Spain

Coauthor

Ms. Leire Bilbao, INASMET-TECNALIA, Spain

Coauthor

Dr. Javier Coleto, INASMET-TECNALIA, Spain

Year

2006

Abstract

Devices based on wide-bandgap semiconductors such as SiC or GaN allow high power densities and elevated working temperatures. These devices and their applications present new challenges in terms of thermal management, of which packaging forms an integral part. Here we present an innovative package for high-power electronics, which has been developed within the framework of an ESA-contracted project. The paper will show the housing concept and design study, materials selection, manufacturing method and first test results.
Thermal modelling was used to select the most suitable materials and geometries for optimising the thermal path. Materials are designed and selected for their high thermal conductivity and low thermal expansion. Several materials were taken into account for the different parts of the housing: AlN was selected as dielectric substrate material, and novel metal-matrix composites (MCC) based on the combinations Cu/Diamond and Cu/Carbon-nanofibres were evaluated as heat-sink materials. Subsequently, a complete bonding study between ceramic materials and the different MCCs was performed. AlN and the MMCs parts were manufactured by hot-pressing in order to obtain fully dense materials, resulting in a novel combination and bonding method. Hot-pressing is a powder-metallurgical near-net shaping technology which reduces the need for laborious and expensive machining operations. The powders for the MMCs were obtained by an electroless plating process. This process is currently being up-scaled from laboratory to a small-scale industrial production facility, which to our knowledge is the only one in its kind.
Preliminary characterisation of the housing and its parts show encouraging results as a solution for high- power devices working at temperatures up to 300ºC. Thermal conductivities in the order of 500W/mK and thermal expansion coefficients of around 10 ppm/K have been obtained. These are comparable to the state-of-the-art materials available. However, these commercial materials do not lend themselves to near-net shape processing. Outgassing, thermal cycling and hermeticity tests of the packages were performed.
The presented new packaging solutions are showing great promise for space applications such as high-frequency power amplifiers for satellite communications and for radar transmitters, and have started to generate an interest from commercial space-system manufacturers.

Abstract document

IAC-06-C2.8.07.pdf

Manuscript document

IAC-06-C2.8.07.pdf (🔒 authorized access only).

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