On the Evaluation of Thermodiffusion and Simulation of convection in semiconductor-molten metal Mixtures
- Paper number
IAC-11,A2,4,11,x9472
- Author
Dr. Morteza Eslamian, Ryerson University, Canada
- Author
Mrs. Elham Jafar-Salehi, Ryerson University, Canada
- Author
Prof. Ziad Saghir, Ryerson University, Canada
- Year
2011
- Abstract
This research reports on thermodiffusion (thermomigration) phenomenon and convection in a binary mixture of silicon and Aluminum utilizing Temperature Gradient Zone Melting (TGZM) method. The TGZM method is used in fabrication of MEMS, NEMS, solar cell and etc. Here the linear non-equilibrium thermodynamics was used to study thermodiffusion and numerical techniques was used for convection investigation. The predicted result showed a good agreement with experimental data qualitatively. It was determined that inadequacy of non-equilibrium thermodynamic model and the uncertainties in experimental data due to thermodiffusion and gravity induced convection in molten zone cause the discrepancies between experimental and numerical results. Moreover, the convection influence on mixture becomes prominent and produces unwanted mixture when the aspect ratio and thickness are increase in cell model.
- Abstract document
- Manuscript document
(absent)