Research and Fabrication of Inverted Metamorphic Triple-junction Solar Cell with 32% Efficiency
- Paper number
IAC-13,C3,3,1,x16844
- Author
Mr. Ni Jiawei, China Aerospace Science and Technology Corporation (CASC), China
- Coauthor
Mr. Lu Jianfeng, China
- Year
2013
- Abstract
With the development of aerospace mission, it has higher requirements for the photovoltaic performance of the space solar cell. Because the band-gap of Ge subcell is relatively small, photoelectric conversion efficiency of the traditional lattice-matched GaInP2/GaAs/Ge triple-junction solar cell has limited space to improve. Inverted metamorphic triple-junction (IMM-3J) GaInP2/GaAs/InGaAs(1.0eV) solar cells have been developed at Shanghai Institute of Space Power-Sources (SISP). InGaAs Subcell has been fabricated by using low-temperature large-mismatch and step-graded buffer layers synthetically and the high quality of these sub-cells has been confirmed by XRD test. With the world’s advanced level, the 32.12\% maximum efficiency (AM0 135.3mW/cm2 25 degrees) IMM-3J GaAs based solar cell have been successfully attained after the structure of as grown samples reversed through wafer bonding and substrate-removal technique. Spectral response measurement results showed that the subcells had excellent internal quantum efficiency and the short-circuit current matched. The high efficiency IMM-3J solar cell was successfully fabricated by SISP, which make efforts of development of multi-junction GaAs solar cell technology.
- Abstract document
- Manuscript document
IAC-13,C3,3,1,x16844.pdf (🔒 authorized access only).
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