A epitaxy technology of growing high qulality In0.3Ga0.7As material with large lattice mismatch degree
- Paper number
IAC-13,C3,P,4.p1,x16791
- Coauthor
Dr. YANG Hongdong, Shanghai Insitute of Space Propulsion, China
- Coauthor
Mr. Lu Jianfeng, China
- Coauthor
Mr. Wang Xunchun, China
- Coauthor
Dr. Zhou Dayong, China
- Coauthor
Prof. Qian Bin, China
- Coauthor
Mr. Jiang Depeng, China
- Year
2013
- Abstract
In order to fabricate high quality large lattice mismatch sub-cell, this paper presents a method of component step-graded combined with low-temperature buffer technologies. Grown on GaAs substrate, large mismatch degree ($>$2\%) In\small 0.3Ga\small 0.7AS material have low threading dislocation density ($<$10\small 6cm\small 2), high relaxation （$>$95\%）, low surface roughness (RMS is 1.7nm). Based on this material, a In0.3Ga0.7As (band gap is 1.0eV) sub-cell with top and middle simulation layers is fabricated and its efficiency is greater than 6.5\%. This provides a technical approach for improve multi-junction solar cells. 2\%
- Abstract document
- Manuscript document
IAC-13,C3,P,4.p1,x16791.pdf (🔒 authorized access only).
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