Simulation on Internal Electrostatic Charge in Dielectric with Both-Sides Grounding
- Paper number
IAC-16,C2,6,11,x32520
- Coauthor
Mr. Xue Yuxiong, Lanzhou Institute of Physics, China
- Year
2016
- Abstract
Internal electrostatic charge and discharge is a serious phenomenon that damages electric properties of dielectrics in satellites. In this work, Monte-Carlo simulation and finite element method was combined to simulate the whole process of internal electrostatic charge, considering radiation induced conductivity(RIC) and both-sides grounding conditions. The results show that for electron beam with energy of 1MeV and flux of 10pA/cm2 injected into 3 mm FR4 both with and without electrodes for 2 hours, the maximum value of electric field reaches about 3E6 V/m, and that of potential reaches about 6000V at the depth of about 1.5mm.
- Abstract document
- Manuscript document
(absent)